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| Transistors DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA Digital transistors (built in resistor) DTA124TH / DTA124TE / DT124TUA / DTA124TKA / DTA124TSA !Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. !External dimensions (Units : mm) DTA124TH 0.27 1.6 0.85 (1) 0.5 0.5 (3) (2) 0.12 0to0.1 0.7 1.0 1.6 ROHM : EMT3H (1) Emitter (2) Base (3) Collector Addreviated symbol : 95 DTA124TE 0.3 (3) (1) (2) 0.2 0.50.5 1.0 0.8 1.6 0.15 0.2 0.55 0.1Min. 0to0.1 !Equivalent circuit ROHM : EMT3 0.7 1.6 Addreviated symbol : 95 (1) Emitter (2) Base (3) Collector C B R1 E DTA124TUA (1) 0.3 (3) 1.25 2.1 0.15 0.2 (2) B : Base C : Collector E : Emitter ROHM : UMT3 EIAJ : SC-70 0.1to0.4 0to0.1 0.7 0.9 1.3 2.0 All terminals have same dimensions 0.65 0.65 (1) Emitter (2) Base (3) Collector Addreviated symbol : 95 DTA124TKA (1) All terminals have same dimensions 0.4 (3) (2) 1.6 2.8 0.15 0.8 1.1 0.95 0.95 1.9 2.9 ROHM : SMT3 EIAJ : SC-59 0.3to0.6 (1) Emitter (2) Base (3) Collector Addreviated symbol : 95 DTA124TSA 3 4 0to0.1 2 (15Min.) 3Min. 0.45 2.5 5 0.5 0.45 ROHM : SPT EIAJ : SC-72 (1) (2) (3) (1) Emitter (2) Collector (3) Base Transistors !Absolute maximum ratings (Ta=25C) Parameter Symbol H VCBO VCEO VEBO IC PC Tj Tstg 150 DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA Limits(DTA124T ) E UA -50 -50 -5 -100 200 150 -55~+150 300 KA SA V V V mA mW C C Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature !Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. -50 -50 -5 100 15.4 Typ. 250 22 250 Max. -0.5 -0.5 -0.3 600 28.6 Unit V V V A A V k MHz IC=-50A IC=-1mA IE=-50A VCB=-50V VEB=-4V IC/IB=-5mA/-0.5mA VCE=-5V, IC=-1mA VCE=-10V, IE=5mA, f=100MHz Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Transition frequency of the device !Packaging specifications Package Package type Code Basic ordering unit (pieces) EMT3H EMT3 UMT3 SMT3 SPT Taping T2L 8000 Taping TL 3000 - Taping T106 3000 - Taping T146 3000 - Taping TP 5000 - Part No. DTA124TH DTA124TE DTA124TUA DTA124TKA DTA124TSA - - - !Electrical characteristic curves COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k 500 VCE=-5V -1 -500m -200m -100m -50m -20m -10m -5m -2m Ta=100C 25C -40C IC/IB=10 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 -100 -200 -500 -1m -2m -5m -10m -20m -50m -100m Ta=100C 25C -40C -1m -10 -20 -50 -100 -200 -500 -1m -2m -5m -10m COLLECTOR CURRENT : IC (A) COLLECTOR URRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current |
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